Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si

doi:10.1016/j.vacuum.2012.11.018

	Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si
	Zhong, YR 3; Li, BS1 ; Wang, BY 3; Qin, XB 3; Zhang, LQ1 ; Yang, YT1 ; Wang, R 2; Jin, YF 1; Zhang, CH1 ; Wang, ZG1
刊名	VACUUM
	2013
卷号	93 期号:93 页码:22-27
关键词	Ion implantation Oxide precipitates Si-O stretching band Vacancy-type defects Microstructures
ISSN号	0042-207X
DOI	10.1016/j.vacuum.2012.11.018
英文摘要	The effects of the processing conditions on the formation of buried oxide precipitates in He and O co-implanted Si were investigated by the combination of Fourier transform infrared (FTIR) absorption spectroscopy, depth-resolved positron annihilation Doppler spectroscopy, and transmission electron microscopy (TEM). Silicon wafers were implanted with 50 keV He ions at a fluence of 2 x 10(16) cm(-2) and subsequent 150 key O ions at a fluence of 2 x 10(17) cm(-2). For comparison, reference Si wafers were only implanted with 150 keV O ions. The Si-O-Si stretching frequency increases while the peak width of the Si-O-Si stretching absorption band decreases with an increase in annealing temperature. After the same annealing, the peak width of the Si-O-Si stretching absorption band in the He and O co-implanted sample is significantly larger than that in the reference sample. Two kinds of vacancy-type defects are observed by positrons, i.e., vacancy-type defects and vacancy-oxygen complexes. The characteristic S values of vacancy-type defects and vacancy-type complexes in the He and O co-implanted sample are smaller than those of the reference sample. In addition, the thickness of the buried oxide layer in the He and O co-implanted sample is smaller than that in the reference sample. After annealing at 1473 K, the O content is larger in the He and O co-implanted sample compared to that in the reference sample. (C) 2012 Elsevier Ltd. All rights reserved.
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资助项目	National Natural Science Foundation of China[10575124] ; National Natural Science Foundation of China[11505130]
WOS关键词	OXYGEN IMPLANTATION ; INFRARED-SPECTROSCOPY ; SIMOX STRUCTURES ; SILICON DIOXIDE ; ENERGY ; INSULATOR ; FILMS ; SEPARATION ; CAVITIES ; DEFECTS
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000316092900004
内容类型	期刊论文
源URL	[http://ir.impcas.ac.cn/handle/113462/14997]
专题	近代物理研究所_能源材料研究组近代物理研究所_材料研究中心近代物理研究所_先进核能材料研究室（ADS）
作者单位	1.中国科学院近代物理研究所 2.北京师范大学 3.中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhong, YR,Li, BS,Wang, BY,et al. Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si[J]. VACUUM,2013,93(93):22-27.
APA	Zhong, YR.,Li, BS.,Wang, BY.,Qin, XB.,Zhang, LQ.,...&Wang, ZG.(2013).Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si.VACUUM,93(93),22-27.
MLA	Zhong, YR,et al."Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si".VACUUM 93.93(2013):22-27.