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CORC

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EAST-NBI抑制极电源IGBT串联技术的研究 期刊论文
核技术, 2017, 卷号: 40
作者:  张亚兵;  刘智民;  蒋才超;  刘胜;  陈世勇
收藏  |  浏览/下载：1/0  |  提交时间：2020/10/26
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
作者:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi)
收藏  |  浏览/下载：28/0  |  提交时间：2016/12/12
Two-dimensional physically based semi-analytical model of source/drain series resistance in MOSFETs 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 卷号: Vol.55 No.1
作者:  Hu,Pengfei;  He,Pei;  Ke,Daoming
收藏  |  浏览/下载：8/0  |  提交时间：2019/04/22
16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator 期刊论文
ELECTRONICS LETTERS, 2015, 卷号: 51, 期号: 15, 页码: 2
作者:  Zhang, ZL(张志利);  Yu, GH(于国浩);  Zhang, XD(于国浩);  Tan, SX;  Wu, DD(吴冬东)
收藏  |  浏览/下载：43/0  |  提交时间：2015/12/31
A novel method for measuring parasitic resistance in high electron mobility transistors 期刊论文
固体电子学, 2014
Yang, Zhen; Wang, Jinyan; Li, Xiaoping; Zhang, Bo; Zhao, Jian; Xu, Zhe; Wang, Maojun; Yu, Min; Yang, Zhenchuan; Wu, Wengang; Zhang, Yuming; Zhang, Jincheng; Ma, Xiaohua; Hao, Yue
收藏  |  浏览/下载：6/0  |  提交时间：2015/11/10
Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress 期刊论文
journal of semiconductors, 2014
Yang, Zhen; Wang, Jinyan; Xu, Zhe; Li, Xiaoping; Zhang, Bo; Wang, Maojun; Yu, Min; Zhang, Jincheng; Ma, Xiaohua; Li, Yongbing
收藏  |  浏览/下载：7/0  |  提交时间：2015/11/10
Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 期号: 24
作者:  Wang, Lijuan;  Li, Yiping;  Song, Xiaofeng;  Liu, Xin;  Zhang, Long
收藏  |  浏览/下载：7/0  |  提交时间：2019/04/09
基于新型双极测试结构的低剂量率辐照感生缺陷研究 学位论文
博士, 北京: 中国科学院大学, 2013
作者:  席善斌
收藏  |  浏览/下载：41/0  |  提交时间：2013/05/31
Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator 期刊论文
applied physics letters, 2013, 卷号: 103, 期号: 24, 页码: 文献号：243302
Wang LJ; Li YP; Song XF; Liu X; Zhang L; Yan DH
收藏  |  浏览/下载：11/0  |  提交时间：2014/04/14
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1
Cao, ZF; Lin, ZJ; Lu, YJ; Luan, CB; Yu, YX; Chen, H; Wang, ZG
收藏  |  浏览/下载：16/0  |  提交时间：2013/09/17

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