| Two-dimensional physically based semi-analytical model of source/drain series resistance in MOSFETs | |
| Hu,Pengfei; He,Pei; Ke,Daoming | |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 2016 | |
| 卷号 | Vol.55 No.1 |
| 关键词 | EFFECTIVE CHANNEL-LENGTH NANOMETER REGIME LDD MOSFETS EXTRACTION GATE BIAS |
| ISSN号 | 0021-4922 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2155480 |
| 专题 | 安徽大学 |
| 作者单位 | Anhui Univ, Sch Elect & Informat Engn, Hefei 230601, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu,Pengfei,He,Pei,Ke,Daoming. Two-dimensional physically based semi-analytical model of source/drain series resistance in MOSFETs[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2016,Vol.55 No.1. |
| APA | Hu,Pengfei,He,Pei,&Ke,Daoming.(2016).Two-dimensional physically based semi-analytical model of source/drain series resistance in MOSFETs.JAPANESE JOURNAL OF APPLIED PHYSICS,Vol.55 No.1. |
| MLA | Hu,Pengfei,et al."Two-dimensional physically based semi-analytical model of source/drain series resistance in MOSFETs".JAPANESE JOURNAL OF APPLIED PHYSICS Vol.55 No.1(2016). |
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