16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator

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	16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator
	Zhang, ZL(张志利); Yu, GH(于国浩); Zhang, XD(于国浩); Tan, SX; Wu, DD(吴冬东); Fu, K(付凯); Huang, W(黄伟); Cai, Y(蔡勇); Zhang, BS(张宝顺)
刊名	ELECTRONICS LETTERS
	2015
卷号	51 期号:15 页码:2
通讯作者	Fu, K (付凯)
英文摘要	An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) on Si substrate was obtained with 18 nm silicon nitride (Si3N4) grown by low-pressure chemical vapour deposition (LPCVD) as the gate insulator. The D-mode MIS-HEMT shows a high I-dss of 16.8 A at V-g = 3 V, a high breakdown voltage (BV) of 600 V and a low-specific on-resistance of 2.3 m Omega.cm(2). The power device figure of merit (FOM = BV2/R-on,R-sp) is calculated as 157 MW.cm(-2). The good insulation effects of LPCVD-Si3N4 were also demonstrated by the low gate leakage current of 154 nA at V-ds = 600 V and V-gs = -14 V. Furthermore, an E-mode device was realised by a low-voltage silicon metal-oxide-semiconductor field-effect transistor in series; the V-th was determined to be 2.6 V. The high I-dss, low-specific on-resistance, high BV and positive V-th show the potential and advantages of GaN MIS-HEMTs for power switching applications.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3336]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Zhang, ZL,Yu, GH,Zhang, XD,et al. 16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator[J]. ELECTRONICS LETTERS,2015,51(15):2.
APA	Zhang, ZL.,Yu, GH.,Zhang, XD.,Tan, SX.,Wu, DD.,...&Zhang, BS.(2015).16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator.ELECTRONICS LETTERS,51(15),2.
MLA	Zhang, ZL,et al."16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator".ELECTRONICS LETTERS 51.15(2015):2.