Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

	Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator
	Wang LJ ; Li YP ; Song XF ; Liu X ; Zhang L ; Yan DH
刊名	applied physics letters
	2013
卷号	103 期号:24 页码:文献号：243302
关键词	FIELD-EFFECT TRANSISTORS THIN-FILM-TRANSISTOR ORGANIC SEMICONDUCTOR CAPACITANCE
ISSN号	0003-6951
通讯作者	wang lj
中文摘要	we have investigated the interfacial and electrical properties of vanadyl-phthalocyanine (vopc) metal-insulator-semiconductor devices by the measurement of capacitance and conductance. the devices have been fabricated on ordered para-sexiphenyl (p-6p) layer with silicon nitride (sinx) as gate insulator. the vopc/p-6p/sinx devices have shown a negligible hysteresis, low series resistance, and high operated frequency. bulk traps have been distinguished from interface traps by two loss peaks in conductance measurement. trap densities and distribution of trap energy level have been obtained. the improved properties indicate that vopc/p-6p devices with sinx insulator hold a great promise of application in flexible displays. (c) 2013 aip publishing llc.
收录类别	SCI收录期刊论文
语种	英语
WOS记录号	WOS:000328706500084
公开日期	2014-04-14
内容类型	期刊论文
源URL	[http://ir.ciac.jl.cn/handle/322003/49405]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Wang LJ,Li YP,Song XF,et al. Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator[J]. applied physics letters,2013,103(24):文献号：243302.
APA	Wang LJ,Li YP,Song XF,Liu X,Zhang L,&Yan DH.(2013).Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator.applied physics letters,103(24),文献号：243302.
MLA	Wang LJ,et al."Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator".applied physics letters 103.24(2013):文献号：243302.