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Epitaxial growth of Ge film on 6H-SiC(0001) by LPCVD
期刊论文
2016, 卷号: 10, 页码: 737-739
作者:
Han, Y. L.
;
Pu, H. B.
;
Zang, Y.
;
Li, L. B.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/20
SiC/Ge heterostructure
LPCVD
Oswald coalescence
Stranski-Krastanow mode
Monitoring quantum dot growth by in-situ cantilever systems
会议论文
Duan, H.L.
;
Wang, Y.
;
Yi, X.
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2015/11/13
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:
Xu B
;
Jin P
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/03/09
INAS
Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions
期刊论文
Thin solid films, 2005, 卷号: 476, 期号: 1, 页码: 68-72
作者:
Sun, J
;
Jin, P
;
Wang, ZG
;
Zhang, HZ
;
Wang, ZY
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/05/12
Liquid phase epitaxy (lpe)
Scanning electron microscopy (sem)
Molecular beam epitaxy (mbe)
Atomic force microscopy (afm)
Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE)
会议论文
Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China
Fan X. W.
;
Shan C. X.
;
Yang Y.
;
Zhang J. Y.
;
Liu Y. C.
;
Lu Y. M.
;
Shen D. Z.
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  |  
浏览/下载:17/0
  |  
提交时间:2013/03/25
CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time
the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration
the size of dots becomes larger and the density decreases
which is explained by virtue of the surface free energy.
Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions
期刊论文
thin solid films, 2005, 卷号: 476, 期号: 1, 页码: 68-72
Sun, J
;
Jin, P
;
Wang, ZG
;
Zhang, HZ
;
Wang, ZY
;
Hu, LZ
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/17
liquid phase epitaxy (LPE)
Growth of nano-structures on composition-modulated inalas surfaces
期刊论文
Journal of physics-condensed matter, 2004, 卷号: 16, 期号: 43, 页码: 7603-7610
作者:
Zhao, FA
;
Chen, YH
;
Ye, XL
;
Jin, P
;
Xu, B
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/05/12
Fabrication of ZnCdSe quantum dots under Stranski-Krastanow mode
期刊论文
Journal of Crystal Growth, 2004, 卷号: 265, 期号: 3—4, 页码: 541-547
Shan C. X.
;
Fan X. W.
;
Zhang J. Y.
;
Zhang Z. Z.
;
Wang X. H.
;
Lu Y. M.
;
Liu Y. C.
;
Shen D. Z.
;
Lu S. Z.
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2012/10/21
Growth of nano-structures on composition-modulated InAlAs surfaces
期刊论文
journal of physics-condensed matter, 2004, 卷号: 16, 期号: 43, 页码: 7603-7610
作者:
Jin P
;
Ye XL
;
Xu B
收藏
  |  
浏览/下载:190/58
  |  
提交时间:2010/03/09
MOLECULAR-BEAM EPITAXY
Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
期刊论文
PHYSICAL REVIEW B, 2003, 卷号: 68, 期号: 16
Cao, YG
;
Xie, MH
;
Liu, Y
;
Xu, SH
;
Ng, YF
;
Wu, HS
;
Tong, SY
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2013/09/24
ASSEMBLED QUANTUM DOTS
STEP-FLOW GROWTH
SIZE
SURFACES
STRAIN
HETEROEPITAXY
HOMOEPITAXY
MORPHOLOGY
DEPOSITION
INAS
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