Growth of nano-structures on composition-modulated InAlAs surfaces

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	Growth of nano-structures on composition-modulated InAlAs surfaces
	Jin P; Ye XL; Xu B
刊名	journal of physics-condensed matter
	2004
卷号	16 期号:43 页码:7603-7610
关键词	MOLECULAR-BEAM EPITAXY
ISSN号	0953-8984
通讯作者	zhao, fa, chinese acad sci, key lab semicond mat sci, inst semicond, pob 912, beijing, peoples r china. 电子邮箱地址: zhaofa@red.semi.ac.cn
中文摘要	inas self-organized nanostructures were grown with variant deposition thickness and growth rate on closely matched inalas/inp by molecular-beam epitaxy. the structural properties. of inas and inalas layer were studied. it is found that the inas morphology is insensitive to the growth conditions. transmission electron microscopy and reflectance difference spectroscopy measurements show that the inalas matrix presents lateral composition modulation which gives birth to surface anisotropy. based on the dependence of the inas morphology on the anisotropy of the inalas layer, a modified stranski-krastanow growth mode is presented to describe the growth of the nanostructure on a composition-modulated surface.
英文摘要	inas self-organized nanostructures were grown with variant deposition thickness and growth rate on closely matched inalas/inp by molecular-beam epitaxy. the structural properties. of inas and inalas layer were studied. it is found that the inas morphology is insensitive to the growth conditions. transmission electron microscopy and reflectance difference spectroscopy measurements show that the inalas matrix presents lateral composition modulation which gives birth to surface anisotropy. based on the dependence of the inas morphology on the anisotropy of the inalas layer, a modified stranski-krastanow growth mode is presented to describe the growth of the nanostructure on a composition-modulated surface.; 于批量导入; 于批量导入; chinese acad sci, key lab semicond mat sci, inst semicond, beijing, peoples r china
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7896]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P,Ye XL,Xu B. Growth of nano-structures on composition-modulated InAlAs surfaces[J]. journal of physics-condensed matter,2004,16(43):7603-7610.
APA	Jin P,Ye XL,&Xu B.(2004).Growth of nano-structures on composition-modulated InAlAs surfaces.journal of physics-condensed matter,16(43),7603-7610.
MLA	Jin P,et al."Growth of nano-structures on composition-modulated InAlAs surfaces".journal of physics-condensed matter 16.43(2004):7603-7610.