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浏览/检索结果: 共13条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168 作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11 AIGaN/AIN/GaN HFETs  2DEG density distribution  Passivation  Polarization Coulomb field scattering   Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 AIP ADVANCES, 2013, 卷号: 3, 期号: 9 Yu, YX; Lin, ZJ; Luan, CB; Lv, YJ; Feng, ZH; Yang, M; Wang, YT; Chen, H 收藏  |  浏览/下载：12/0  |  提交时间：2014/01/16 The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文 Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei 收藏  |  浏览/下载：13/0  |  提交时间：2021/02/02 Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文 CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 4 Lu, YJ; Lin, ZJ; Zhang, Y; Meng, LG; Cao, ZF; Luan, CB; Chen, H; Wang, ZG 收藏  |  浏览/下载：14/0  |  提交时间：2013/09/17 FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN   Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏  |  浏览/下载：57/2  |  提交时间：2011/07/05 AlGaN/GaN heterostructures  thermal stressing  polarization  self-consistently solving Schrodinger's and Poisson's equations  FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN   Self-consistent analysis of alsb/inas high electron mobility transistor structures 期刊论文 Journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: 7 作者:  Li, Yanbo;  Zhang, Yang;  Zeng, Yiping 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文 JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 4, 页码: 7 作者:  Li, Yanbo;  Zhang, Yang;  Zeng, Yiping 收藏  |  浏览/下载：0/0  |  提交时间：2021/02/02 Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504 Li YB (Li Yanbo); Zhang Y (Zhang Yang); Zeng YP (Zeng Yiping) 收藏  |  浏览/下载：212/46  |  提交时间：2010/10/11 INAS/ALSB QUANTUM-WELLS  LOW-POWER APPLICATIONS  HEMTS  MODULATION  HETEROSTRUCTURES  TECHNOLOGY  CHANNEL  VOLTAGE  MASS   Self-consistent analysis of double-delta-doped inalas/ingaas/inp hemts 期刊论文 Chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741 作者:  Li Dong-Lin;  Zeng Yi-Ping 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Two-dimensional electron gas  High electron mobility transistor  Self-consistent calculation  Inalas/ingaas heterostructure