Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts

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	Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
	Lu, YJ ; Lin, ZJ ; Zhang, Y ; Meng, LG ; Cao, ZF ; Luan, CB ; Chen, H ; Wang, ZG
刊名	CHINESE PHYSICS B
	2011
卷号	20 期号:4
关键词	FIELD-EFFECT TRANSISTORS POLARIZATION STABILITY CHARGE GAN
ISSN号	1674-1056
通讯作者	Lin, ZJ: Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
中文摘要	Ni Schottky contacts on AlGaN/GaN heterostructures have been fabricated. The samples are then thermally treated in a furnace with N(2) ambient at 600 degrees C for different times (0.5, 4.5, 10.5, 18, 33, 48 and 72 h). Current voltage (I-V) and capacitance voltage (C-V) relationships are measured, and Schrodinger's and Poisson's equations are self-consistently solved to obtain the characteristic parameters related to AlGaN/GaN heterostructure Schottky contacts: the two-dimensional electron gas (2DEG) sheet density, the polarization sheet charge density, the 2DEG distribution in the triangle quantum well and the Schottky barrier height for each thermal stressing time. Most of the above parameters reduce with the increase of stressing time, only the parameter of the average distance of the 2DEG from the AlGaN/GaN interface increases with the increase of thermal stressing time. The changes of the characteristic parameters can be divided into two stages. In the first stage the strain in the AlGaN barrier layer is present. In this stage the characteristic parameters change rapidly compared with those in the second stage in which the AlGaN barrier layer is relaxed and no strain is present.
收录类别	SCI
资助信息	National Natural Science Foundation of China [10774090]; National Basic Research Program of China [2007CB936602]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/39915]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Lu, YJ,Lin, ZJ,Zhang, Y,et al. Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts[J]. CHINESE PHYSICS B,2011,20(4).
APA	Lu, YJ.,Lin, ZJ.,Zhang, Y.,Meng, LG.,Cao, ZF.,...&Wang, ZG.(2011).Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts.CHINESE PHYSICS B,20(4).
MLA	Lu, YJ,et al."Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts".CHINESE PHYSICS B 20.4(2011).