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| Surface characterization of AlGaN grown on Si (111) substrates 期刊论文 journal of crystal growth, 2011, 卷号: 331, 期号: 1, 页码: 29-32 Pan X; Wang XL; Xiao HL; Wang CM; Feng C; Jiang LJ; Yin HB; Chen H 收藏  |  浏览/下载:17/0  |  提交时间:2012/01/06
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| Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method 期刊论文 journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 19-25 Qu BZ; Chen Z; Lu DC; Han P; Liu XG; Wang XH; Wang D; Zhu QS; Wang ZG 收藏  |  浏览/下载:39/0  |  提交时间:2010/08/12
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| Void formation and failure in InGaN/AlGaN double heterostructures 期刊论文 journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 404-412 作者: Han PD 收藏  |  浏览/下载:207/2  |  提交时间:2010/08/12
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| GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition 期刊论文 journal of crystal growth, 2003, 卷号: 255, 期号: 1-2, 页码: 52-56 Chen DJ; Shen B; Bi ZX; Zhang KX; Gu SL; Zhang R; Shi Y; Zheng YD; Sun XH; Wan SK; Wang ZG 收藏  |  浏览/下载:471/1  |  提交时间:2010/08/12
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| High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers 期刊论文 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358 作者: Zhao DG 收藏  |  浏览/下载:61/0  |  提交时间:2010/08/12
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| Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文 journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40 作者: Zhao DG 收藏  |  浏览/下载:300/12  |  提交时间:2010/08/12
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| Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文 journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77 作者: Li DB 收藏  |  浏览/下载:57/0  |  提交时间:2010/08/12
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| Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD 期刊论文 journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 84-90 作者: Li DB 收藏  |  浏览/下载:56/0  |  提交时间:2010/08/12
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| X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates 期刊论文 journal of crystal growth, 2003, 卷号: 254, 期号: 1-2, 页码: 23-27 Shen XM; Wang YT; Zheng XH; Zhang BS; Chen J; Feng G; Yang H 收藏  |  浏览/下载:111/0  |  提交时间:2010/08/12
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| A geometrical model of GaN morphology in initial growth stage 期刊论文 journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 115-120 作者: Han PD 收藏  |  浏览/下载:79/8  |  提交时间:2010/08/12
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