A geometrical model of GaN morphology in initial growth stage

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	A geometrical model of GaN morphology in initial growth stage
	Han PD
刊名	journal of crystal growth
	2002
卷号	234 期号:1 页码:115-120
关键词	computer simulation crystal morphology atomic force microscopy nitrides AIN BUFFER LAYER SAPPHIRE
ISSN号	0022-0248
通讯作者	lu dc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	based on morphology observed by atomic force microscopy, a geometrical model was proposed in order to explain the statistical results obtained from morphology observation on gan in initial growth stage. four parameters were introduced to describe the morphology characteristics in this model. least-square fitting of height distribution was performed. the height distribution derived from the model agreed well with that obtained from experimental records. it was also found that the model should be further advanced to understand the growth of gan in initial growth stage. (c) 2002 elsevier science by. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12042]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han PD. A geometrical model of GaN morphology in initial growth stage[J]. journal of crystal growth,2002,234(1):115-120.
APA	Han PD.(2002).A geometrical model of GaN morphology in initial growth stage.journal of crystal growth,234(1),115-120.
MLA	Han PD."A geometrical model of GaN morphology in initial growth stage".journal of crystal growth 234.1(2002):115-120.