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科研机构
半导体研究所 [14]
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期刊论文 [13]
会议论文 [1]
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2011 [1]
2010 [1]
2008 [1]
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半导体材料 [14]
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Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells
期刊论文
cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13
Liu, Shi-Yong
;
Zeng, Xiang-Bo
;
Peng, Wen-Bo
;
Yao, Wen-Jie
;
Xie, Xiao-Bing
;
Yang, Ping
;
Wang, Chao
;
Wang, Zhan-Guo
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  |  
浏览/下载:32/0
  |  
提交时间:2012/06/14
Amorphous films
Chemical vapor deposition
Energy gap
High resolution electron microscopy
High resolution transmission electron microscopy
Hydrogen
Nanocrystalline silicon
Optical band gaps
Plasma deposition
Plasma enhanced chemical vapor deposition
Raman spectroscopy
Semiconducting silicon compounds
Solar power generation
Thin films
Transmission electron microscopy
Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 12, 页码: article no.124215
Wang Y
;
Pan JQ
;
Zhao LJ
;
Zhu HL
;
Wang W
收藏
  |  
浏览/下载:46/1
  |  
提交时间:2011/07/05
electroabsorption modulator
tunnel injection
wide temperature range operation
quantum well intermixing
LIGHT-SOURCE MODULE
LOW-DRIVE-VOLTAGE
DFB LASER
TEMPERATURE-DEPENDENCE
CHIRP
TRANSMISSION
OPERATION
LAYER
DIODE
GB/S
Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 12, 页码: 4364-4367
作者:
Wei HY
;
Jiao CM
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  |  
浏览/下载:178/45
  |  
提交时间:2010/03/08
TRANSMISSION ELECTRON-MICROSCOPY
WURTZITE-TYPE CRYSTALS
VAPOR-PHASE EPITAXY
INTRINSIC STRESS
SAPPHIRE SURFACE
THIN-FILMS
GAN
GROWTH
DIFFRACTION
MECHANISM
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:
Zhang Y
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  |  
浏览/下载:46/0
  |  
提交时间:2010/04/11
resonant tunnelling diode
InP substrate
molecular beam epitaxy
high resolution transmission electron microscope
CURRENT-VOLTAGE CHARACTERISTICS
INTRINSIC BISTABILITY
CIRCUIT
Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)
期刊论文
journal of crystal growth, 2005, 卷号: 284, 期号: 3-4, 页码: 306-312
Wang YL
;
Chen YH
;
Wu J
;
Lei W
;
Wang ZG
;
Zeng YP
收藏
  |  
浏览/下载:124/70
  |  
提交时间:2010/03/17
high-resolution transmission electron microscopy
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
期刊论文
micron, 2004, 卷号: 35, 期号: 6, 页码: 475-480
Luo, XH
;
Wang, RM
;
Zhang, XP
;
Zhang, HZ
;
Yu, DP
;
Luo, MC
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  |  
浏览/下载:145/32
  |  
提交时间:2010/03/09
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH
;
Wang RM
;
Zhang XP
;
Zhang HZ
;
Yu DP
;
Luo MC
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  |  
浏览/下载:18/1
  |  
提交时间:2010/10/29
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes
期刊论文
applied physics letters, 2004, 卷号: 84, 期号: 11, 页码: 1961-1963
Qiu ZJ
;
Gui YS
;
Guo SL
;
Dai N
;
Chu JH
;
Zhang XX
;
Zeng YP
收藏
  |  
浏览/下载:52/13
  |  
提交时间:2010/03/09
TRANSMISSION COEFFICIENT
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ
;
Kong X
;
Wan L
;
Wang YQ
;
Duan XF
;
Lu Y
;
Liu XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/08/12
amorphous layer
dislocation
transmission electron microscopy
metalorganic chemical vapor deposition
GaN
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
HETEROEPITAXIAL GROWTH
ELECTRON-DIFFRACTION
DEFECT STRUCTURE
HETEROSTRUCTURE
DISLOCATIONS
MICROSCOPY
(111)SI
LAYER
Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates
期刊论文
journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72
Shen XM
;
Fu Y
;
Feng G
;
Zhang BS
;
Feng ZH
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
transmission electron microscopy
X-ray diffraction
epitaxial lateral overgrowth
metalorganic vapor phase epitaxy
cubic gallium nitride
CHEMICAL-VAPOR-DEPOSITION
CUBIC GAN
PHASE EPITAXY
REDUCTION
GROWTH
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