Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)
Wang YL ; Chen YH ; Wu J ; Lei W ; Wang ZG ; Zeng YP
刊名journal of crystal growth
2005
卷号284期号:3-4页码:306-312
关键词high-resolution transmission electron microscopy
ISSN号0022-0248
通讯作者wang, yl, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: wangyli@red.semi.ac.cn
中文摘要six-stacked inas/in0.52al0.48as self-assembled quantum wires (qwrs) on inp(001) by molecular-beam epitaxy (mbe) have been studied by high-resolution transmission electron microscopy (hrtem) and polarized pl measurements. we obtained the chemical lattice fringe (clf) image of inas self-assembled qwrs embedded in the in0.52al0.48as matrix by the interference between the (002)-diffracted beam and the transmitted beam in the image plane of the objective lens. the results show that the inas qwrs were bounded by (113), (001) and (114) facets. both the size and strain distribution in qwrs were determined. it was found that with the growth of successive periods, the height and height fluctuation of inas qwrs decreased from the bottom period to the upper one. some suggestions are put forward for further improving the uniformity of the stacked inas qwrs. (c) 2005 elsevier b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-17
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/8434]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Wang YL,Chen YH,Wu J,et al. Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)[J]. journal of crystal growth,2005,284(3-4):306-312.
APA Wang YL,Chen YH,Wu J,Lei W,Wang ZG,&Zeng YP.(2005).Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001).journal of crystal growth,284(3-4),306-312.
MLA Wang YL,et al."Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)".journal of crystal growth 284.3-4(2005):306-312.
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