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| Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2020, 卷号: 137, 页码: 106336 作者: Fangzheng Li; Lianshan Wang ; Weizhen Yao ; Yulin Meng ; Shaoyan Yang; Zhanguo Wang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2021/12/16 |
| Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors 期刊论文 Semiconductor Science and Technology, 2019, 卷号: 34, 期号: 12, 页码: 125006 作者: Weizhen Yao; Lianshan Wang; Fangzheng Li; Yulin Meng; Shaoyan Yang ; Zhanguo Wang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:7/0  |  提交时间:2020/07/30 |
| Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450 作者: Wang Lianshan; Zhao Guijuan; Meng Yulin; Li Huijie; Yang Shaoyan; Wang Zhanguo
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:28/0  |  提交时间:2019/11/15 |
| Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文 Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130 作者: Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:27/0  |  提交时间:2019/11/15 |
| Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455 作者: Meng Yulin; Wang Lianshan; Zhao Guijuan; Li Fangzheng; Li Huijie; Yang Shaoyan; Wang Zhanguo
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:28/0  |  提交时间:2019/11/15 |
| Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure 期刊论文 APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 5, 页码: 052105 作者: Guijuan Zhao; Lianshan Wang; Huijie Li; Yulin Meng; Fangzheng Li; Shaoyan Yang; Zhanguo Wang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:28/0  |  提交时间:2019/11/15 |
| The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488 作者: Li Fangzheng; Wang Lianshan; Zhao Guijuan; Meng Yulin; Li Huijie; Chen Yanan; Yang Shaoyan; Jin Peng; Wang Zhanguo
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:27/0  |  提交时间:2019/11/15 |
| Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping 期刊论文 SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 4497 作者: Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Zesheng Ji
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:31/0  |  提交时间:2018/05/23 |
| Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer 期刊论文 Superlattices and Microstructures, 2017, 卷号: 110, 页码: 324-329 作者: Fangzheng Li; Lianshan Wang; Guijuan Zhao; Yulin Meng; Huijie Li
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:19/0  |  提交时间:2018/05/23 |
| Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer 期刊论文 Superlattices and Microstructures, 2017, 卷号: 110, 页码: 324-329 作者: Fangzheng Li; Lianshan Wang; Guijuan Zhao; Yulin Meng; Huijie Li
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:22/0  |  提交时间:2018/05/23 |