Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors

	Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors
	Weizhen Yao; Lianshan Wang; Fangzheng Li; Yulin Meng; Shaoyan Yang ; Zhanguo Wang
刊名	Semiconductor Science and Technology
	2019
卷号	34 期号:12 页码:125006
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29511]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Weizhen Yao;Lianshan Wang;Fangzheng Li;Yulin Meng;Shaoyan Yang ; Zhanguo Wang. Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors[J]. Semiconductor Science and Technology,2019,34(12):125006.
APA	Weizhen Yao;Lianshan Wang;Fangzheng Li;Yulin Meng;Shaoyan Yang ; Zhanguo Wang.(2019).Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors.Semiconductor Science and Technology,34(12),125006.
MLA	Weizhen Yao;Lianshan Wang;Fangzheng Li;Yulin Meng;Shaoyan Yang ; Zhanguo Wang."Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors".Semiconductor Science and Technology 34.12(2019):125006.