Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy | |
Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang | |
刊名 | Applied Physics A |
2018 | |
卷号 | 124期号:2页码:130 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/29174] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang. Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy[J]. Applied Physics A,2018,124(2):130. |
APA | Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang.(2018).Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy.Applied Physics A,124(2),130. |
MLA | Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang."Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy".Applied Physics A 124.2(2018):130. |
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