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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Xu B;  Jin P 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/09 INAS   Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文 15th international conferene on dynamical processes in excited states of solids, shanghai, peoples r china, aug 01-05, 2005 作者:  Jin P 收藏  |  浏览/下载：159/26  |  提交时间：2010/03/29 quantum dots   Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 作者:  Ye XL;  Jin P;  Xu B 收藏  |  浏览/下载：119/42  |  提交时间：2010/03/29 lateral intersubband photocurrent   Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Jin P;  Xu B 收藏  |  浏览/下载：127/16  |  提交时间：2010/03/29 QUANTUM DOTS   Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Ye XL;  Jin P 收藏  |  浏览/下载：92/22  |  提交时间：2010/03/29 DOTS   Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：82/12  |  提交时间：2010/03/29 1.3 MU-M