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Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏  |  浏览/下载:36/4  |  提交时间:2011/07/05
Effective recombination velocity of textured surfaces 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 19, 页码: art. no. 193107
Xiong KL (Xiong Kanglin); Lu SL (Lu Shulong); Jiang DS (Jiang Desheng); Dong JR (Dong Jianrong); Yang H (Yang Hui)
收藏  |  浏览/下载:119/3  |  提交时间:2010/06/04
GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 2, 页码: art. no. 028102
作者:  Tang B;  Wang GW;  Xu YQ
收藏  |  浏览/下载:159/45  |  提交时间:2010/03/08
Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations 期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 7, 页码: art. no. 073903
Shi, H; Duan, Y
收藏  |  浏览/下载:44/2  |  提交时间:2010/03/08
Evolution of wetting layer in InAs/GaAs quantum dot system 期刊论文
nanoscale research letters, 2006, 卷号: 1, 期号: 1, 页码: 79-83
Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载:59/0  |  提交时间:2010/04/11
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载:55/0  |  提交时间:2010/04/11
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
作者:  Ye XL;  Xu B
收藏  |  浏览/下载:11/0  |  提交时间:2010/10/29
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 期刊论文
materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 62-65
作者:  Ye XL;  Xu B
收藏  |  浏览/下载:63/4  |  提交时间:2010/08/12
Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy 期刊论文
physical review b, 2002, 卷号: 66, 期号: 19, 页码: art.no.195321
作者:  Ye XL
收藏  |  浏览/下载:65/0  |  提交时间:2010/08/12
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
作者:  Xu B;  Ye XL
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15


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