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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载:80/4  |  提交时间:2011/07/05
Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition 期刊论文
surface & coatings technology, 2009, 卷号: 203, 期号: 10-11, 页码: 1452-1456
作者:  Tan HR;  Zhang XW;  You JB;  Fan YM
收藏  |  浏览/下载:262/33  |  提交时间:2010/03/08
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:  Zhang SM
收藏  |  浏览/下载:83/0  |  提交时间:2010/04/11
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载:31/0  |  提交时间:2010/04/11
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文
applied physics letters, 2003, 卷号: 83, 期号: 4, 页码: 677-679
作者:  Zhao DG
收藏  |  浏览/下载:1038/2  |  提交时间:2010/08/12
Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 99-104
Luo XD; Xu ZY; Wang YQ; Wang WX; Wang JN; Ge WK
收藏  |  浏览/下载:26/0  |  提交时间:2010/08/12
Ion bombardment as the initial stage of diamond film growth 期刊论文
Journal of applied physics, 2001, 卷号: 89, 期号: 3, 页码: 1983-1985
作者:  Liao, MY;  Qin, FG;  Zhang, JH;  Liu, ZK;  Yang, SY
收藏  |  浏览/下载:18/0  |  提交时间:2019/05/12
Ion bombardment as the initial stage of diamond film growth 期刊论文
journal of applied physics, 2001, 卷号: 89, 期号: 3, 页码: 1983-1985
Liao MY; Qin FG; Zhang JH; Liu ZK; Yang SY; Wang ZG; Lee ST
收藏  |  浏览/下载:43/0  |  提交时间:2010/08/12
Rapid thermal annealing processing of GaN epilayer on sapphire(0 0 0 1) 期刊论文
journal of crystal growth, 1998, 卷号: 186, 期号: 1-2, 页码: 298-301
Li XB; Sun DZ; Kong MY; Yoon SF
收藏  |  浏览/下载:41/0  |  提交时间:2010/08/12


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