Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy

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	Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy
	Luo XD ; Xu ZY ; Wang YQ ; Wang WX ; Wang JN ; Ge WK
刊名	journal of crystal growth
	2003
卷号	247 期号:1-2 页码:99-104
关键词	growth interruption molecular beam epitaxy quantum dots GaSb WELLS
ISSN号	0022-0248
通讯作者	luo xd,chinese acad sci,inst semicond,nlsm,beijing 100083,peoples r china.
中文摘要	the growth interruption (gi) effect on gasb quantum dot formation grown on gaas by molecular beam epitaxy was investigated. the structure characterization was performed by reflection high-energy electron diffraction (rheed), along with photoluminescence measurements. it is found that the gi can significantly change the surface morphology of gasb qds. during the gi, the qds structures can be smoothed out and turned into a 2d-like structure. the time duration of the gi required for the 3d/2d transition depends on the growth time of the gasb layer. it increases with the increase of the growth time. our results are explained by a combined effect of the stress relaxation process and surface exchange reactions during the gi. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11688]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo XD,Xu ZY,Wang YQ,et al. Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy[J]. journal of crystal growth,2003,247(1-2):99-104.
APA	Luo XD,Xu ZY,Wang YQ,Wang WX,Wang JN,&Ge WK.(2003).Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy.journal of crystal growth,247(1-2),99-104.
MLA	Luo XD,et al."Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy".journal of crystal growth 247.1-2(2003):99-104.