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	Ion bombardment as the initial stage of diamond film growth
	Liao, MY; Qin, FG; Zhang, JH; Liu, ZK; Yang, SY; Wang, ZG; Lee, ST
刊名	Journal of applied physics
	2001-02-01
卷号	89期号:3页码:1983-1985
ISSN号	0021-8979
通讯作者	Liao, my()
英文摘要	It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (cvd), ion bombardment is the main mechanism in the bias-enhanced-nucleation (ben) process. to verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a si substrate. the results are similar to those of the ben process, which supports the ion-bombardment-enhanced-nucleation mechanism. the formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. the ion-bombarded si is expected to enhance the cvd diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (c) 2001 american institute of physics.
WOS关键词	BIAS-ENHANCED NUCLEATION ; CHEMICAL-VAPOR-DEPOSITION ; BEAM DEPOSITION ; MECHANISM ; SILICON ; SPECTROSCOPY
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000166644400071
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429096
专题	半导体研究所
通讯作者	Liao, MY
作者单位	1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Liao, MY,Qin, FG,Zhang, JH,et al. Ion bombardment as the initial stage of diamond film growth[J]. Journal of applied physics,2001,89(3):1983-1985.
APA	Liao, MY.,Qin, FG.,Zhang, JH.,Liu, ZK.,Yang, SY.,...&Lee, ST.(2001).Ion bombardment as the initial stage of diamond film growth.Journal of applied physics,89(3),1983-1985.
MLA	Liao, MY,et al."Ion bombardment as the initial stage of diamond film growth".Journal of applied physics 89.3(2001):1983-1985.

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