CORC

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CORC

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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.)
收藏  |  浏览/下载：103/26  |  提交时间：2010/03/29
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin)
收藏  |  浏览/下载：101/29  |  提交时间：2010/03/29
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Sun, GS (Sun, G. S.); Liu, XF (Liu, X. F.); Gong, QC (Gong, Q. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Li, JY (Li, J. Y.); Zeng, YP (Zeng, Y. P.); Li, JM (Li, J. M.)
收藏  |  浏览/下载：166/18  |  提交时间：2010/03/29
4H-SiC  
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Sun, GS; Ning, J; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM
收藏  |  浏览/下载：206/60  |  提交时间：2010/03/29
Studies of 6H-SiC devices 会议论文
korea-china joint symposium on smiconductor physics and device applications, seoul, south korea, dec 05-09, 2001
Wang SR; Liu ZL
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15

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