Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC
	Li JM ; Sun GS ; Zhu SR ; Wang L ; Luo MC ; Zhang FF ; Lin LY
	2001
会议名称	11th international conference on molecular beam epitaxy (mbe-xi)
会议日期	sep 11-15, 2000
会议地点	beijing, peoples r china
关键词	X-ray diffraction molecular beam epitaxy semiconducting silicon compounds LOW-TEMPERATURE GROWTH FILMS
页码	816-819
通讯作者	sun gs chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	homoepitaxial growth of sic on a si-face (0 0 0 1) gh-sic substrate has been performed in a modified gas-source molecular beam epitaxy system with si2h6 and c2h4 at temperatures ranging 1000 1450 degreesc while keeping a constant sic ratio (0.7) in the gas phase. x-ray diffraction patterns, raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline sic. mesa-type sic p-n junctions were obtained on these epitaxial layers, and their i-v characteristics are presented. (c) 2001 elsevier science b.v. all rights reserved.
英文摘要	homoepitaxial growth of sic on a si-face (0 0 0 1) gh-sic substrate has been performed in a modified gas-source molecular beam epitaxy system with si2h6 and c2h4 at temperatures ranging 1000 1450 degreesc while keeping a constant sic ratio (0.7) in the gas phase. x-ray diffraction patterns, raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline sic. mesa-type sic p-n junctions were obtained on these epitaxial layers, and their i-v characteristics are presented. (c) 2001 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:20导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:20z (gmt). no. of bitstreams: 1 2921.pdf: 116178 bytes, checksum: b8e2f9e7a84c957cc2a3e10d48cbf05a (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.
会议录	journal of crystal growth, 227
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14951]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li JM,Sun GS,Zhu SR,et al. Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000.