High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	High epitaxial growth rate of 4H-SiC using TCS as silicon precursor
	Ji, G ; Sun, GS ; Ning, J ; Liu, XF ; Zhao, YM ; Wang, L ; Zhao, WS ; Zeng, YP
	2008
会议名称	9th international conference on solid-state and integrated-circuit technology
会议日期	oct 20-23, 2008
会议地点	beijing, peoples r china
页码	vols 1-4: 696-698
通讯作者	ji, g, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china.
中文摘要	high homoepitaxial growth of 4h-sic has been performed in a home-made horizontal hot wall cvd reactor on n-type 4h-sic 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (tcs) as silicon precursor source together with ethylene as carbon precursor source. cross-section scanning electron microscopy (sem), raman scattering spectroscopy and atomic force microscopy (afm) were used to determine the growth rate, structural property and surface morphology, respectively. the growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees c with tcs flow rate of 12 seem in c/si of 0.42, which has a good surface morphology with a low rms of 0.64 nm in 10 mu mx10 mu m area.
英文摘要	high homoepitaxial growth of 4h-sic has been performed in a home-made horizontal hot wall cvd reactor on n-type 4h-sic 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (tcs) as silicon precursor source together with ethylene as carbon precursor source. cross-section scanning electron microscopy (sem), raman scattering spectroscopy and atomic force microscopy (afm) were used to determine the growth rate, structural property and surface morphology, respectively. the growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees c with tcs flow rate of 12 seem in c/si of 0.42, which has a good surface morphology with a low rms of 0.64 nm in 10 mu mx10 mu m area.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t07:08:14z (gmt). no. of bitstreams: 1 275.pdf: 1826782 bytes, checksum: 6e03094fffe8dfe13e92cd5b4ef5380a (md5) previous issue date: 2008; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [ji, gang; sun, guosheng; liu, xingfang; zhao, yongmei; wang, lei; zhao, wanshun; zeng, yiping] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.
会议录	2008 9th international conference on solid-state and integrated-circuit technology
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	978-1-4244-2185-5
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/8276]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ji, G,Sun, GS,Ning, J,et al. High epitaxial growth rate of 4H-SiC using TCS as silicon precursor[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008.