CORC

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Relaxation of compressive strain by inclining threading dislocations in Al0.45Ga0.55N epilayer grown on AlN/sapphire templates using graded-AlxGa1-xN/AlN multi-buffer layers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 3
作者:  Liu, C.
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/05
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.)
收藏  |  浏览/下载:103/26  |  提交时间:2010/03/29
Heteroepitaxy of cdte on tilting si(211) substrates by molecular beam epitaxy 期刊论文
Journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 436-440
作者:  Wang, YZ;  Chen, L;  Wu, Y;  Wu, J;  Yu, MF
收藏  |  浏览/下载:21/0  |  提交时间:2019/05/10
Kinetic study of MOCVD III-V quaternary antimonides 期刊论文
rare metals, 1999, 卷号: 18, 期号: 1, 页码: 16-20
Peng RW; Wei GY; Wu W; Wang ZG
收藏  |  浏览/下载:41/0  |  提交时间:2010/08/12
Characterization of GaSb substrate wafers for MOCVD III-V antimonides 会议论文
7th international conference on defect recognition and image processing in semiconductors (drip-vii), templin, germany, sep 07-10, 1997
Peng RW; Ding YQ; Xu CM; Wang XG
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/15
Characterization of GaSb substrate wafers for MOCVD III-V antimonides 期刊论文
defect recognition and image processing in semiconductors 1997, 1998, 卷号: 160, 期号: 0, 页码: 417-420
Peng RW; Ding YQ; Xu CM; Wang XG
收藏  |  浏览/下载:29/0  |  提交时间:2010/08/12


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