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科研机构
半导体研究所 [16]
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会议论文 [16]
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2008 [1]
2007 [1]
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2002 [4]
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半导体材料 [9]
光电子学 [4]
半导体物理 [3]
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内容类型:会议论文
专题:半导体研究所
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Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Fan, JM
;
Wang, LC
;
Guo, JX
;
Yi, XY
;
Liu, ZQ
;
Wang, GH
;
Li, JM
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/03/09
GaN-based LED
Micro-LEDs
light extraction efficiency
ray tracing
flip-chip
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
收藏
  |  
浏览/下载:17/1
  |  
提交时间:2010/10/29
GaNAs
SiO2 encapsulation
rapid-thermal-annealing
nitrogen reorganization
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
MU-M
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
neutron irradiation
annealing
defects in silicon
SPECTRA
Real-time far distance micro-vibration measurement using an external cavity semiconductor laser interferometer with a feedback control system
会议论文
conference on optical design and testing, shanghai, peoples r china, oct 15-18, 2002
Zhao WR
;
Jiang PF
;
Xie FZ
收藏
  |  
浏览/下载:21/7
  |  
提交时间:2010/10/29
external cavity semiconductor laser interferometer
far distance
micro-vibration measurement
feedback control
DISPLACEMENT MEASUREMENT
DIODE INTERFEROMETER
PHASE
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
Optical properties of AIInGaN quaternary alloys
会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Huang JS
;
Dong X
;
Luo XD
;
Liu XL
;
Xu ZY
;
Ge WK
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
LIGHT-EMITTING-DIODES
LOCALIZED EXCITONS
LUMINESCENCE
RELAXATION
SILICON
BAND
Stress analysis of silica-based arrayed waveguide grating by a finite element method
会议论文
photonics asia symposium 2002, shanghai, peoples r china, oct 14-18, 2002
Deng XQ
;
Yang QQ
;
Wang HJ
;
Hu XW
;
Wang QM
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/10/29
finite element method
stress
silica optical waveguide on silicon
birefringence
OPTICAL WAVE-GUIDES
DIFFERENCE METHOD
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/11/15
annealing
molecular beam epitaxy
germanium silicon alloys
semiconducting materials
STRAIN RELAXATION
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
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