Optical properties of AIInGaN quaternary alloys

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	Optical properties of AIInGaN quaternary alloys
	Huang JS ; Dong X ; Luo XD ; Liu XL ; Xu ZY ; Ge WK
	2002
会议名称	conference on optoelectronic and microelectronic materials and devices (commad)
会议日期	dec 11-13, 2002
会议地点	sydney, australia
关键词	LIGHT-EMITTING-DIODES LOCALIZED EXCITONS LUMINESCENCE RELAXATION SILICON BAND
页码	49-52
通讯作者	huang js chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	carrier recombination dynamics in alingan alloy has been studied by photoluminescence (pl) and time-resolved photoluminescence (trpl). the fast redshift of pl peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. this result provides evidence for the exciton localization in the quantum dot (qd)-like potentials in our alingan alloy. the trpl signals are found to be described by a stretched exponential function of exp[(-t/tau)(beta)], indicating the presence of a significant disorder in the material. the disorder is attributed to a randomly distributed quantum dots or clusters caused by indium fluctuations. by studying the dependence of the dispersive exponent 8 on the temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered quantum dots. furthermore, the localized states are found to have od density of states up to 250 k, since the radiative lifetime remains almost unchanged with increasing temperature.
英文摘要	carrier recombination dynamics in alingan alloy has been studied by photoluminescence (pl) and time-resolved photoluminescence (trpl). the fast redshift of pl peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. this result provides evidence for the exciton localization in the quantum dot (qd)-like potentials in our alingan alloy. the trpl signals are found to be described by a stretched exponential function of exp[(-t/tau)(beta)], indicating the presence of a significant disorder in the material. the disorder is attributed to a randomly distributed quantum dots or clusters caused by indium fluctuations. by studying the dependence of the dispersive exponent 8 on the temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered quantum dots. furthermore, the localized states are found to have od density of states up to 250 k, since the radiative lifetime remains almost unchanged with increasing temperature.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:31z (gmt). no. of bitstreams: 1 2809.pdf: 254147 bytes, checksum: 5eaa4af87c63bd2a4a8b8cec313fff43 (md5) previous issue date: 2002; ansto sims lab.; avt vacuum & cryogen serv.; coltron syst pty ltd.; heys technol int pty ltd.; ieee, elect devices soc.; ieee, lasers & electro opt soc.; lastek pty ltd.; oxford instruments plasma technol pty ltd.; panalytical.; philips elect.; scitek australia pty ltd.; warsash sci pty ltd.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ansto sims lab.; avt vacuum & cryogen serv.; coltron syst pty ltd.; heys technol int pty ltd.; ieee, elect devices soc.; ieee, lasers & electro opt soc.; lastek pty ltd.; oxford instruments plasma technol pty ltd.; panalytical.; philips elect.; scitek australia pty ltd.; warsash sci pty ltd.
会议录	commad 2002 proceedings
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体物理
语种	英语
ISBN号	0-7803-7571-8
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13639]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Huang JS,Dong X,Luo XD,et al. Optical properties of AIInGaN quaternary alloys[C]. 见:conference on optoelectronic and microelectronic materials and devices (commad). sydney, australia. dec 11-13, 2002.