Hydrogen behavior in GaN epilayers grown by NH3-MBE

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	Hydrogen behavior in GaN epilayers grown by NH3-MBE
	Kong MY ; Zhang JP ; Wang XL ; Sun DZ
	2001
会议名称	11th international conference on molecular beam epitaxy (mbe-xi)
会议日期	sep 11-15, 2000
会议地点	beijing, peoples r china
关键词	impurities molecular beam epitaxy nitrides semiconducting III-V materials GALLIUM NITRIDE SAPPHIRE SUBSTRATE DEFECTS HETEROSTRUCTURE SEMICONDUCTORS STRESS
页码	371-375
通讯作者	kong my chinese acad sci inst semicond pob 912 beijing 100083 peoples r china.
中文摘要	hydrogen behavior in unintentionally doped gan epilayers on sapphire substrates grown by nh3-mbe is investigated. firstly, we find by using nuclear reaction analysis (nra) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped gan, secondly, fourier transform infrared (ftir) absorption and x-ray photoelectron spectroscopy (xps) reveal further that hydrogen atom is bound to nitrogen atom in gan with a local vibrational mode at about 3211 cm(-1) hence, it is presumed that the hydrogen-related complex ga. . .h-n is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in gan films. finally, raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases gan films suffer from serious tensile biaxial strain. this anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (c) 2001 elsevier science b.v. all rights reserved.
英文摘要	hydrogen behavior in unintentionally doped gan epilayers on sapphire substrates grown by nh3-mbe is investigated. firstly, we find by using nuclear reaction analysis (nra) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped gan, secondly, fourier transform infrared (ftir) absorption and x-ray photoelectron spectroscopy (xps) reveal further that hydrogen atom is bound to nitrogen atom in gan with a local vibrational mode at about 3211 cm(-1) hence, it is presumed that the hydrogen-related complex ga. . .h-n is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in gan films. finally, raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases gan films suffer from serious tensile biaxial strain. this anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (c) 2001 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:17导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:17z (gmt). no. of bitstreams: 1 2912.pdf: 192411 bytes, checksum: 0d2a19b323cfd4da550f5ff0c072a8c5 (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.
会议录	journal of crystal growth, 227
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14933]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kong MY,Zhang JP,Wang XL,et al. Hydrogen behavior in GaN epilayers grown by NH3-MBE[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000.