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科研机构
半导体研究所 [20]
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会议论文 [20]
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2011 [1]
2009 [1]
2008 [3]
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2003 [2]
2002 [3]
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半导体材料 [14]
光电子学 [5]
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内容类型:会议论文
专题:半导体研究所
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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
会议论文
16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010
Pan X (Pan Xu)
;
Wei M (Wei Meng)
;
Yang CB (Yang Cuibai)
;
Xiao HL (Xiao Hongling)
;
Wang CM (Wang Cuimei)
;
Wang XL (Wang Xiaoliang)
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2011/07/26
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G
会议论文
6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007
作者:
Chen P
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/03/09
pockels effect
Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P
会议论文
6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007
Sun, MX
;
Tan, MQ
;
Zhao, M
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
antireflective coatings
superluminescent diodes
double source electron beam evaporation technology
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
HVPE
GaN
nitridation
polarity
etching
Design of spectrometer based on volume phase grating for near infrared range
会议论文
3rd international symposium on instrumentation science and technology, xian, peoples r china, aug 18-22, 2004
Li F
;
Xin HL
;
Cao P
;
Liu YL
收藏
  |  
浏览/下载:15/1
  |  
提交时间:2010/10/29
spectrometer
volume phase grating
optical design
resolution
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Gao, X
;
Li, JM
;
Sun, GS
;
Zhang, NH
;
Wang, L
;
Zhao, WS
;
Zeng, YP
收藏
  |  
浏览/下载:135/48
  |  
提交时间:2010/03/29
SI(111)
ALN
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH
;
Wang RM
;
Zhang XP
;
Zhang HZ
;
Yu DP
;
Luo MC
收藏
  |  
浏览/下载:18/1
  |  
提交时间:2010/10/29
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
The diphasic nc-Si/a-Si : H thin film with improved medium-range order
会议论文
20th international conference on amorphous and microcrystalline semiconductors, campos do jordao, brazil, aug 25-29, 2003
Zhang S
;
Liao X
;
Xu Y
;
Martins R
;
Fortunato E
;
Kong G
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
AMORPHOUS-SILICON FILMS
SCATTERING
ABSORPTION
DENSITIES
HYDROGEN
Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition
会议论文
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
Zeng XB
;
Liao XB
;
Diao HW
;
Hu ZH
;
Xu YY
;
Zhang SB
;
Chen CY
;
Chen WD
;
Kong GL
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/10/29
LASER-ABLATION
SEMICONDUCTOR NANOWIRES
GROWTH
MECHANISM
EVAPORATION
DIAMETER
WIRES
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