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	Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G
	Chen P
	2008
会议名称	6th international conference on thin film physics and applications
会议日期	sep 25-28, 2007
会议地点	shanghai, peoples r china
关键词	pockels effect
页码	6984: g9841-g9841
通讯作者	chen, p, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china.
中文摘要	the linear electro-optic (pockels) effect of wurtzite gallium nitride (gan) films and six-period gan/alxga1-xn superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical mach-zehnder interferometer system with an incident light wavelength of 1.55 mu m. the samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (mocvd). the measured coefficients of the gan/alxga1-xn superlattices are much larger than those of bulk material. taking advantage of the strong field localization due to resonances, gan/alxga1-xn sl can be proposed to engineer the nonlinear responses.
英文摘要	the linear electro-optic (pockels) effect of wurtzite gallium nitride (gan) films and six-period gan/alxga1-xn superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical mach-zehnder interferometer system with an incident light wavelength of 1.55 mu m. the samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (mocvd). the measured coefficients of the gan/alxga1-xn superlattices are much larger than those of bulk material. taking advantage of the strong field localization due to resonances, gan/alxga1-xn sl can be proposed to engineer the nonlinear responses.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; shanghai jiao tong univ, dept phys.; natl nat sci fdn china.; chinese phys soc.; shanghai phys soc.; spie.; [chen, p.; lib, s. p.; tu, x. g.; zuo, y. h.; zhao, l.; chen, s. w.; yu, y. d.; yu, j. z.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	其他
会议主办者	shanghai jiao tong univ, dept phys.; natl nat sci fdn china.; chinese phys soc.; shanghai phys soc.; spie.
会议录	thin film physics and applications,sixth international conference
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	978-0-8194-7182-6
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/7784]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen P. Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G[C]. 见:6th international conference on thin film physics and applications. shanghai, peoples r china. sep 25-28, 2007.

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