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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 9, 页码: art. no. 094320 Tang AW (Tang Aiwei); Qu SC (Qu Shengchun); Hou YB (Hou Yanbing); Teng F (Teng Feng); Tan HR (Tan Hairen); Liu J (Liu Jie); Zhang XW (Zhang Xingwang); Wang YS (Wang Yongsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：30/0  |  提交时间：2010/12/12 THIN-FILM  OPTICAL-PROPERTIES  RAMAN-SCATTERING  MEMORY DEVICES  NANOPARTICLES  NANOCRYSTALS  MOLECULE  CLUSTERS   A highly efficient light-trapping structure for thin-film silicon solar cells 期刊论文 solar energy, 84 (1): 110-115 jan 2010, 2010, 卷号: 84, 期号: 1, 页码: 110-115 Zhao L; Zuo YH; Zhou CL; Li HL; Diao HW; Wang WJ 收藏  |  浏览/下载：105/3  |  提交时间：2010/04/13 Light-trapping  Thin-film silicon solar cell  Diffraction grating  Distributed Bragg reflector  Metal reflector  COUPLED-WAVE ANALYSIS  GRATINGS  DIFFRACTION  DESIGN   Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method 期刊论文 journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645 Wei, XC; Zhao, YW; Dong, ZY; Li, JM 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/08 defects  X-ray diffraction  growth from vapor  oxides  semiconducting II-VI materials   A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure 期刊论文 semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 786-789 作者:  Jin P 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 DELTA-DOPED GAAS  FRANZ-KELDYSH OSCILLATIONS  BUILT-IN FIELD  FERMI-LEVEL  PHOTOREFLECTANCE  SURFACE  SPECTROSCOPY   Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文 journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77 作者:  Li DB 收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12 nanostructures  stretched exponential  time-resolved photolummescence  metalorganic vapor phase epitaxy  nitrides  InAlGaN  INXALYGA1-X-YN QUATERNARY ALLOYS  TIME-RESOLVED PHOTOLUMINESCENCE  MULTIPLE-QUANTUM WELLS  ALINGAN/GAN HETEROSTRUCTURES  GAN  DECAY  LUMINESCENCE  SAPPHIRE  DEVICES  SILICON   Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE 期刊论文 journal of crystal growth, 2000, 卷号: 218, 期号: 1, 页码: 1-6 Xu HZ; Wang ZG; Kawabe M; Harrison I; Ansell BJ; Foxon CT 收藏  |  浏览/下载：60/0  |  提交时间：2010/08/12 GaN  photoluminescence  optical quenching of photoconductivity  native defect level  molecular beam epitaxy  SINGLE-CRYSTAL GAN  I-N PHOTODIODES  HIGH-SPEED  PHOTOCONDUCTORS  ALXGA1-XN  SIMULATIONS  DETECTORS  SAPPHIRE  LAYERS