Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE

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	Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE
	Xu HZ ; Wang ZG ; Kawabe M ; Harrison I ; Ansell BJ ; Foxon CT
刊名	journal of crystal growth
	2000
卷号	218 期号:1 页码:1-6
关键词	GaN photoluminescence optical quenching of photoconductivity native defect level molecular beam epitaxy SINGLE-CRYSTAL GAN I-N PHOTODIODES HIGH-SPEED PHOTOCONDUCTORS ALXGA1-XN SIMULATIONS DETECTORS SAPPHIRE LAYERS
ISSN号	0022-0248
通讯作者	xu hz,univ tsukuba,inst appl phys,tsukuba,ibaraki 3058573,japan.
中文摘要	interdigital metal-semiconductor-metal (msm) ultraviolet photoconductive detectors have been fabricated on undoped gan films grown by molecular beam epitaxy (mbe), response dependence on wavelength, applied current, excitation powers and chopper frequency has been extensively investigated. it is shown that the photodetector's spectral response remained nearly constant for wavelengths above the band gap and dropped sharply by almost three orders of magnitude for wavelengths longer than the band gap. it increases linearly with the applied constant current, but very nonlinearly with illuminating power. the photodetectors showed high photoconductor gains resulting from trapping of minority carriers (holes) at acceptor impurities or defects. the results demonstrated the high quality of the gan crystal used to fabricate these devices. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12460]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu HZ,Wang ZG,Kawabe M,et al. Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE[J]. journal of crystal growth,2000,218(1):1-6.
APA	Xu HZ,Wang ZG,Kawabe M,Harrison I,Ansell BJ,&Foxon CT.(2000).Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE.journal of crystal growth,218(1),1-6.
MLA	Xu HZ,et al."Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE".journal of crystal growth 218.1(2000):1-6.