Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method

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	Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method
	Wei, XC ; Zhao, YW ; Dong, ZY ; Li, JM
刊名	journal of crystal growth
	2008
卷号	310 期号:3 页码:639-645
关键词	defects X-ray diffraction growth from vapor oxides semiconducting II-VI materials
ISSN号	0022-0248
通讯作者	wei, xc, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xcwei@semi.ac.cn
中文摘要	hall effect, raman scattering, photoluminescence spectroscopy (pl), optical absorption (oa), mass spectroscopy, and x-ray diffraction have been used to study bulk zno single crystal grown by a closed chemical vapor transport method. the results indicate that shallow donor impurities (ga and al) are the dominant native defects responsible for n-type conduction of the zno single crystal. pl and oa results suggest that the as-grown and annealed zno samples with poor lattice perfection exhibit strong deep level green photoluminescence and weak ultraviolet luminescence. the deep level defect in as-grown zno is identified to be oxygen vacancy. after high-temperature annealing, the deep level photoluminescence is suppressed in zno crystal with good lattice perfection. in contrast, the photoluminescence is nearly unchanged or even enhanced in zno crystal with grain boundary or mosaic structure. this result indicates that a trapping effect of the defect exists at the grain boundary in zno single crystal. (c) 2007 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6880]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wei, XC,Zhao, YW,Dong, ZY,et al. Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method[J]. journal of crystal growth,2008,310(3):639-645.
APA	Wei, XC,Zhao, YW,Dong, ZY,&Li, JM.(2008).Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method.journal of crystal growth,310(3),639-645.
MLA	Wei, XC,et al."Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method".journal of crystal growth 310.3(2008):639-645.