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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：53/10  |  提交时间：2011/07/05
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Wei, XC; Zhao, YW; Dong, ZY; Li, JM
收藏  |  浏览/下载：52/0  |  提交时间：2010/03/08
Influence of electron irradiation on hydrothermally grown zinc oxide single crystals 期刊论文
semiconductor science and technology, 2008, 卷号: 23, 期号: 9, 页码: art. no. 095028
Lu LW; So CK; Zhu CY; Gu QL; Li CJ; Fung S; Brauer G; Anwand W; Skorupa W; Ling CC
收藏  |  浏览/下载：110/1  |  提交时间：2010/03/08
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803
Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo)
收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29
Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 5, 页码: 455-458
Zhao Youwen; Sun Niefeng; S. Fung; C. D. Beling; Sun Tongnian; Lin Lanying
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/23
Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者:  Xu B
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者:  Zhao DG
收藏  |  浏览/下载：62/0  |  提交时间：2010/08/12
Residual donors in undoped LEC InP 会议论文
11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000
Zhao YW; Sun NF; Sun TN; Lin LY; Wu XW; Guo WL; Wu X; Bi KY
收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29

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