Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP
	Zhao Youwen ; Sun Niefeng ; S. Fung ; C. D. Beling ; Sun Tongnian ; Lin Lanying
刊名	半导体学报
	2002
卷号	23 期号:5 页码:455-458
中文摘要	the free electron concentration of as-grown liquid encapsulated czochralski (lec) inp measured by hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. evidence of the existence of a native donor hydrogen-indium vacancy complex in lec undoped and fe-doped inp materials can be observed with infrared absorption spectra. the concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity fe~(2+) concentration in fe-doped semi-insulating (si) inp. these results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown lec inp, and that it has significant influence on the compensation in fe-doped si inp.
英文摘要	the free electron concentration of as-grown liquid encapsulated czochralski (lec) inp measured by hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. evidence of the existence of a native donor hydrogen-indium vacancy complex in lec undoped and fe-doped inp materials can be observed with infrared absorption spectra. the concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity fe~(2+) concentration in fe-doped semi-insulating (si) inp. these results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown lec inp, and that it has significant influence on the compensation in fe-doped si inp.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:08:34导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:08:34z (gmt). no. of bitstreams: 1 5119.pdf: 287199 bytes, checksum: 3d071e95d9c12123a96806595bb5dc86 (md5) previous issue date: 2002; institute of semiconductors, the chinese academy of sciences;hebei semiconductor research institute;department of physics, the university of hong kong
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/18145]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao Youwen,Sun Niefeng,S. Fung,et al. Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP[J]. 半导体学报,2002,23(5):455-458.
APA	Zhao Youwen,Sun Niefeng,S. Fung,C. D. Beling,Sun Tongnian,&Lin Lanying.(2002).Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP.半导体学报,23(5),455-458.
MLA	Zhao Youwen,et al."Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP".半导体学报 23.5(2002):455-458.