×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [28]
内容类型
期刊论文 [24]
会议论文 [4]
发表日期
2011 [2]
2010 [1]
2009 [1]
2008 [4]
2007 [2]
2006 [2]
更多...
学科主题
半导体材料 [28]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共28条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
收藏
  |  
浏览/下载:57/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo)
;
Zhang Y (Zhang Yang)
;
Zeng YP (Zeng Yiping)
收藏
  |  
浏览/下载:213/46
  |  
提交时间:2010/10/11
INAS/ALSB QUANTUM-WELLS
LOW-POWER APPLICATIONS
HEMTS
MODULATION
HETEROSTRUCTURES
TECHNOLOGY
CHANNEL
VOLTAGE
MASS
Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films
期刊论文
thin solid films, 2009, 卷号: 517, 期号: 6, 页码: 1989-1994
作者:
Li Y
收藏
  |  
浏览/下载:360/38
  |  
提交时间:2010/03/08
Bulge test
Fracture property
Silicon nitride
Weibull distribution function
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/03/09
bulge test fracture property
silicon carbide thin films
Weibull distribution function
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms
期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 5, 页码: 1120-1134
Yang, JL
;
Gaspar, J
;
Paul, O
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/03/08
Bulge test
fracture
pooled Weibull analysis
silicon nitride (Si3N4)
silicon oxide (SiO2)
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane
期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 2, 页码: 453-461
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/03/08
bulge test
fracture property
microelectromechanical systems (MEMS)
silicon carbide (SiC) thin films
Weibull distribution function
Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling
期刊论文
spectroscopy and spectral analysis, 2007, 卷号: 27, 期号: 11, 页码: 2178-2181
Jia, GZ
;
Yao, JH
;
Zhang, CL
;
Shu, Q
;
Liu, RB
;
Ye, XL
;
Wang, ZG
收藏
  |  
浏览/下载:60/2
  |  
提交时间:2010/03/08
photoluminescence spectroscopy
quantum dot
bimodal distribution
state-filling
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
期刊论文
applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7423-7428
作者:
Duan RF
;
Wei TB
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/03/29
GaN
©版权所有 ©2017 CSpace - Powered by
CSpace