Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane
	Zhou, W ; Yang, JL ; Sun, GS ; Liu, XF ; Yang, FH ; Li, JM
刊名	journal of microelectromechanical systems
	2008
卷号	17 期号:2 页码:453-461
关键词	bulge test fracture property microelectromechanical systems (MEMS) silicon carbide (SiC) thin films Weibull distribution function
ISSN号	1057-7157
通讯作者	zhou, w, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: jlyang@semi.ac.cn
中文摘要	this paper reports the mechanical properties and fracture behavior of silicon carbide (3c-sic) thin films grown on silicon substrates. using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the young's modulus, prestress, and fracture strength for the 3c-sic thin films with thicknesses of 0.40 and 1.42 mu m were extracted. the stress distribution in the membranes under a load was calculated analytically. the prestresses for the two films were 322 +/- 47 and 201 +/- 34 mpa, respectively. the thinner 3c-sic film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 gpa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 gpa. the corresponding fracture strengths for the two kinds of sic films were 6.49 +/- 0.88 and 3.16 +/- 0.38 gpa, respectively. the reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with weibull distribution function. for the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. for the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.
学科主题	半导体材料
收录类别	SCI
资助信息	most "863 program" of china 2007aa04z322 hundred talents plan of the chinese academy of sciences manuscript received july 31, 2007; revised december 10, 2007. this work was supported in part by the most "863 program" of china under contract 2007aa04z322. the work of j. yang was supported by the "hundred talents plan" of the chinese academy of sciences. subject editor s. spearing.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6470]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhou, W,Yang, JL,Sun, GS,et al. Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane[J]. journal of microelectromechanical systems,2008,17(2):453-461.
APA	Zhou, W,Yang, JL,Sun, GS,Liu, XF,Yang, FH,&Li, JM.(2008).Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane.journal of microelectromechanical systems,17(2),453-461.
MLA	Zhou, W,et al."Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane".journal of microelectromechanical systems 17.2(2008):453-461.