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CORC

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Unidirectional Coupling of Surface Plasmon Polaritons by a Single Slit on a Metal Substrate 期刊论文
ieee photonics technology letters, 2016, 卷号: 28, 期号: 21, 页码: 2395-2398
Haifeng Hu; Xie Zeng; Yong Zhao; Jin Li; Haomin Song; Guofeng Song; Yun Xu; Qiaoqiang Gan
收藏  |  浏览/下载：14/0  |  提交时间：2017/03/16
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 11, 页码: 113509
Shi K (Shi K.); Zhang PF (Zhang P. F.); Wei HY (Wei H. Y.); Jiao CM (Jiao C. M.); Jin P (Jin P.); Liu XL (Liu X. L.); Yang SY (Yang S. Y.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：14/0  |  提交时间：2012/02/22
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502
Wu M; Zeng YP; Wang JX; Hu Q
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM
收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08
The growth temperatures dependence of optical and electrical properties of InN films 期刊论文
science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242
Liu, B; Zhang, R; Xie, ZL; Xiu, XQ; Li, L; Kong, JY; Yu, HQ; Han, P; Gu, SL; Shi, Y; Zheng, YD; Tang, CG; Chen, YH; Wang, ZG
收藏  |  浏览/下载：48/2  |  提交时间：2010/03/08
Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472
作者:  Yang T
收藏  |  浏览/下载：253/54  |  提交时间：2010/03/08
Study of GaN growth on ultra-thin Si membranes 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 986-989
Wang X; Wu AM; Chen J; Wang X; Wu YX; Zhu JJ; Yang H
收藏  |  浏览/下载：59/2  |  提交时间：2010/03/08
GaN  
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929
Wang, XL; Chen, TS; Xiao, HL; Wang, CM; Hu, GX; Luo, WJ; Tang, J; Guo, LC; Li, JM
收藏  |  浏览/下载：78/1  |  提交时间：2010/03/08

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