Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate

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	Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
	Wu M ; Zeng YP ; Wang JX ; Hu Q
刊名	chinese physics letters
	2011
卷号	28 期号:6 页码:article no.68502
关键词	LIGHT-EMITTING-DIODES ULTRAVIOLET GROWTH
ISSN号	0256-307x
通讯作者	wu, m, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. wumeng@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	a low-temperature gan (lt-gan) nucleation layer is grown on a patterned sapphire substrate (pss) using metal-organic chemical vapor deposition (mocvd). the surface morphology of the lt-gan is investigated and the selective nucleation phenomenon in the growth process of the lt-gan nucleation layer is discovered. meanwhile, effects of thickness of the lt-gan and the annealing process on the phenomenon are also discussed. a pattern model is also proposed to analyze the possible mechanisms in atomic scale.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21223]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wu M,Zeng YP,Wang JX,et al. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate[J]. chinese physics letters,2011,28(6):article no.68502.
APA	Wu M,Zeng YP,Wang JX,&Hu Q.(2011).Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate.chinese physics letters,28(6),article no.68502.
MLA	Wu M,et al."Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate".chinese physics letters 28.6(2011):article no.68502.