已选(0)清除
条数/页: 排序方式:
|
| Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文 nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603 作者: Song HP![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:69/3  |  提交时间:2011/07/05
|
| Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108 Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:93/5  |  提交时间:2011/07/05
|
| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文 journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者: Pan X![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2011/09/14
|
| Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s 期刊论文 chemistry of materials, 22 (4): feb 23 2010, 2010, 卷号: 22, 期号: 4, 页码: 1294-1296 Wen Q (Wen Qian); Zhang RF (Zhang Rufan); Qian WZ (Qian Weizhong); Wang YR (Wang Yuran); Tan PH (Tan Pingheng); Nie JQ (NieJingqi); Wei F (Wei Fei)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:128/7  |  提交时间:2010/04/13
|
| Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 12, 页码: 3654-3659 Gao HY (Gao Haiyong); Yan FW (Yan Fawang); Li JM (Li Jinmin); Zeng YP (Zeng Yiping); Wang JX (Wang Junxi)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:80/0  |  提交时间:2010/03/29
|
| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文 journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160 作者: Jiang DS![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:56/0  |  提交时间:2010/08/12
|
| Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369 Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
|
| Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423 Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:25/0  |  提交时间:2010/08/12
|
| Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141 作者: Xu B![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
|
| Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 766-769 Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:98/14  |  提交时间:2010/08/12
|