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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 发表日期：2001    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 399-403 Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：85/11  |  提交时间：2010/08/12 X-ray diffraction  nitrides  semiconducting III-V materials  PHASE  FILMS   Epitaxial growth of SiC on complex substrates 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 optical microscopy  X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  SAPPHIRE  DEPOSITION  FILMS   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS   Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144 Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH; Ge WK 收藏  |  浏览/下载：99/7  |  提交时间：2010/08/12 molecular beam epitaxy  quantum wells  BAND-GAP ENERGY  PHOTOLUMINESCENCE  TEMPERATURE  GANXAS1-X  FILMS   Indium doping effect on GaN in the initial growth stage 期刊论文 journal of electronic materials, 2001, 卷号: 30, 期号: 8, 页码: 977-979 作者:  Han PD 收藏  |  浏览/下载：155/29  |  提交时间：2010/08/12 GaN  indium doping  initial growth stage  morphology  optical transmission  photoluminescence  VAPOR-PHASE EPITAXY  BUFFER LAYER  FILMS  SAPPHIRE  DEPOSITION   Investigation of the new guest-host polyetherketone poled polymer 期刊论文 journal of materials science letters, 2001, 卷号: 20, 期号: 11, 页码: 981-982 Pan QW; Shi W; Gu QT; Wu XW; Fang CS; Yu JZ 收藏  |  浏览/下载：76/4  |  提交时间：2010/08/12 NONLINEAR-OPTICAL-MATERIALS  FILMS   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 816-819 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：79/6  |  提交时间：2010/08/12 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS   Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：23/0  |  提交时间：2010/11/15 X-ray diffraction  nitrides  semiconducting III-V materials  PHASE  FILMS   Epitaxial growth of SiC on complex substrates 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 811-815 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏  |  浏览/下载：95/9  |  提交时间：2010/08/12 optical microscopy  X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  SAPPHIRE  DEPOSITION  FILMS