Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

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	Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
	Qu B ; Zheng XH ; Wang YT ; Xu DP ; Lin SM ; Yang H ; Liang JW
刊名	journal of crystal growth
	2001
卷号	227 期号:0 页码:399-403
关键词	X-ray diffraction nitrides semiconducting III-V materials PHASE FILMS
ISSN号	0022-0248
通讯作者	qu b,chinese acad sci,inst semicond,state key lab integrated optoelectron,pob 912,beijing 100083,peoples r china.
中文摘要	cubic gan/gaas(0 0 1) epilayers and hexagonal inclusions are characterized by x-ray diffraction (xrd), photoluminescence (pl), raman spectroscopy, and transmission electron microscopy (tem). the x-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic gan and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. the distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. in order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12172]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Qu B,Zheng XH,Wang YT,et al. Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates[J]. journal of crystal growth,2001,227(0):399-403.
APA	Qu B.,Zheng XH.,Wang YT.,Xu DP.,Lin SM.,...&Liang JW.(2001).Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates.journal of crystal growth,227(0),399-403.
MLA	Qu B,et al."Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates".journal of crystal growth 227.0(2001):399-403.