Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

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	Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC
	Li JM ; Sun GS ; Zhu SR ; Wang L ; Luo MC ; Zhang FF ; Lin LY
刊名	journal of crystal growth
	2001
卷号	227 期号:0 页码:816-819
关键词	X-ray diffraction molecular beam epitaxy semiconducting silicon compounds LOW-TEMPERATURE GROWTH FILMS
ISSN号	0022-0248
通讯作者	sun gs,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	homoepitaxial growth of sic on a si-face (0 0 0 1) gh-sic substrate has been performed in a modified gas-source molecular beam epitaxy system with si2h6 and c2h4 at temperatures ranging 1000 1450 degreesc while keeping a constant sic ratio (0.7) in the gas phase. x-ray diffraction patterns, raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline sic. mesa-type sic p-n junctions were obtained on these epitaxial layers, and their i-v characteristics are presented. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12184]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li JM,Sun GS,Zhu SR,et al. Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC[J]. journal of crystal growth,2001,227(0):816-819.
APA	Li JM.,Sun GS.,Zhu SR.,Wang L.,Luo MC.,...&Lin LY.(2001).Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC.journal of crystal growth,227(0),816-819.
MLA	Li JM,et al."Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC".journal of crystal growth 227.0(2001):816-819.