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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文    发表日期：2009     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 in-situ doping  boron  aluminum  memory effects  hot-wall LPCVD  4H-SiC   Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP 收藏  |  浏览/下载：54/0  |  提交时间：2010/03/09 Silicon Carbide  Aluminum Nitride  buffer layer  LPCVD   Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films 会议论文 international materials research conference, chongqing, peoples r china, jun 09-12, 2008 作者:  Sun BJ;  Zhao DG 收藏  |  浏览/下载：49/0  |  提交时间：2010/03/09 AlxGa1-xN   Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文 5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008 作者:  Ma WQ;  Cao YL;  Yang T 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09 DENSITY-OF-STATES   40-Gbps Low Chirp Electroabsorption Modulated Distributed Feedback Laser 会议论文 conference on optoelectronic integrated circuits xi, san jose, ca, jan 28-29, 2009 Cheng YB (Cheng Yuanbing); Pan JQ (Pan Jiaoqing); Wang Y (Wang Yang); Zhao LJ (Zhao Lingjuan); Zhu HL (Zhu Hongliang); Wang W (Wang Wei) 收藏  |  浏览/下载：51/5  |  提交时间：2011/07/14 Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文 5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008 作者:  Xu B 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 MOLECULAR-BEAM EPITAXY