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Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer 期刊论文
2018, 卷号: 65, 期号: 2, 页码: 537
作者:  Ning, Honglong[1];  Zeng, Yong[1];  Zheng, Zeke[1];  Zhang, Hongke[1];  Fang, Zhiqiang[1]
收藏  |  浏览/下载:12/0  |  提交时间:2019/12/10
High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment 期刊论文
2018, 卷号: 6, 期号: 10, 页码: 2522
作者:  Yao, Rihui[1];  Zheng, Zeke[1];  Fang, Zhiqiang[1];  Zhang, Hongke[1];  Zhang, Xiaochen[1]
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/06
All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process 期刊论文
2017, 卷号: 5, 期号: [db:dc_citation_issue], 页码: 7043
作者:  Zheng, Zeke[1];  Zeng, Yong[1];  Yao, Rihui[1];  Fang, Zhiqiang[1];  Zhang, Hongke[1]
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/03
Island-Like AZO/Al2O3 Bilayer Channel Structure for Thin Film Transistors 期刊论文
ADVANCED MATERIALS INTERFACES, 2017, 卷号: 4
作者:  Zeng, Yong[1];  Ning, Honglong[2];  Zheng, Zeke[3];  Zhang, Hongke[4];  Fang, Zhiqiang[5]
收藏  |  浏览/下载:13/0  |  提交时间:2019/04/24


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