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	Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer
	Ning, Honglong[1]; Zeng, Yong[1]; Zheng, Zeke[1]; Zhang, Hongke[1]; Fang, Zhiqiang[1]; Yao, Rihui[1]; Hu, Shiben[1]; Li, Xiaoqing[1]; Peng, Junbiao[1]; Xie, Weiguang[2,3]
	2018
卷号	65期号:2页码:537
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4450799
专题	暨南大学
作者单位	1.[1]South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat, Guangzhou 510640, Guangdong, Peoples R China 2.[2]Jinan Univ, Dept Phys, Guangzhou Key Lab Vacuum Coating Technol & New En, Siyuan Lab, Guangzhou 510632, Guangdong, Peoples R China 3.[3]Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China 4.[4]South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China 5.[5]South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Ning, Honglong[1],Zeng, Yong[1],Zheng, Zeke[1],et al. Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer[J],2018,65(2):537.
APA	Ning, Honglong[1].,Zeng, Yong[1].,Zheng, Zeke[1].,Zhang, Hongke[1].,Fang, Zhiqiang[1].,...&Lu, Xubing[4,5].(2018).Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer.,65(2),537.
MLA	Ning, Honglong[1],et al."Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer".65.2(2018):537.

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