×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
湖南大学 [7]
山东大学 [5]
上海大学 [2]
半导体研究所 [1]
内容类型
期刊论文 [15]
发表日期
2020 [1]
2019 [10]
2018 [4]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共15条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides
期刊论文
Small, 2020, 卷号: 17, 页码: 2006765
作者:
Ting He
;
Zhen Wang
;
Ruyue Cao
;
Qing Li
;
Meng Peng
;
Runzhang Xie
;
Yan Huang
;
Yang Wang
;
Jiafu Ye
;
Peisong Wu
;
Fang Zhong
;
Tengfei Xu
;
Hailu Wang
;
Zhuangzhuang Cui
;
Qinghua Zhang
;
Lin Gu
;
Hui-Xiong Deng
;
He Zhu
;
Chongxin Shan
;
Zhongming Wei
;
Weida Hu
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2021/05/21
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film.
期刊论文
Nanoscale research letters, 2019, 卷号: Vol.14 No.1
作者:
Hu Zhuangzhuang
;
Feng Qian
;
Feng Zhaoqing
;
Cai Yuncong
;
Shen Yixian
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/13
Breakdown
voltage
Carrier
transport
mechanism
Reverse
bias
Schottky
emission
β-Ga2O3
Schottky
diode
The investigation of temperature dependent electrical characteristics of Au/Ni/β-(InGa)2O3 Schottky diode
期刊论文
Superlattices and Microstructures, 2019, 卷号: 133
作者:
Shen, Yixian
;
Feng, Qian
;
Zhang, Ke
;
Hu, Zhuangzhuang
;
Yan, Guangshuo
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/11
The investigation of temperature dependent electrical characteristics of Au/Ni/beta-(InGa)(2)O-3 Schottky diode
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2019, 卷号: 133
作者:
Shen, Yixian
;
Feng, Qian
;
Zhang, Ke
;
Hu, Zhuangzhuang
;
Yan, Guangshuo
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/11
High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination
期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: Vol.14
作者:
Gao, Yangyang
;
Li, Ang
;
Feng, Qian
;
Hu, Zhuangzhuang
;
Feng, Zhaoqing
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/17
Ga2O3 Schottky diode
Argon implantation
Edge termination
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated -Ga2O3 Thin Film
期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: Vol.14
作者:
Hu, Zhuangzhuang
;
Feng, Qian
;
Feng, Zhaoqing
;
Cai, Yuncong
;
Shen, Yixian
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/17
Ga2O3 Schottky diode
Carrier transport mechanism
Reverse bias
Schottky emission
Breakdown voltage
High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination
期刊论文
Nanoscale Research Letters, 2019, 卷号: 14
作者:
Gao, Yangyang
;
Li, Ang
;
Feng, Qian
;
Hu, Zhuangzhuang
;
Feng, Zhaoqing
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/11
Solvent-free graphene liquids: Promising candidates for lubricants without the base oil
期刊论文
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2019, 卷号: 542, 页码: 159-167
作者:
Zhang, Jiaoxia
;
Li, Peipei
;
Zhang, Zhuangzhuang
;
Wang, Xiaojing
;
Tang, Jijun
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/11
Graphene oxide
Hyperbranched polyamine-ester
Solvent-free graphene
liquids
Lubricant
High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination
期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: 14
作者:
Gao, Yangyang
;
Li, Ang
;
Feng, Qian
;
Hu, Zhuangzhuang
;
Feng, Zhaoqing
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/11
-Ga2O3 Schottky diode
Argon implantation
Edge termination
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film
期刊论文
Nanoscale Research Letters, 2019, 卷号: Vol.14 No.1
作者:
Zhuangzhuang Hu
;
Qian Feng
;
Zhaoqing Feng
;
Yuncong Cai
;
Yixian Shen
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/13
β-Ga2O3
Schottky
diode
Carrier
transport
mechanism
Reverse
bias
Schottky
emission
Breakdown
voltage
©版权所有 ©2017 CSpace - Powered by
CSpace