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	Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film.
	Hu Zhuangzhuang; Feng Qian; Feng Zhaoqing; Cai Yuncong; Shen Yixian; Yan Guangshuo; Lu Xiaoli; Zhang Chunfu; Zhou Hong; Zhang Jincheng
刊名	Nanoscale research letters
	2019
卷号	Vol.14 No.1
关键词	Breakdown voltage Carrier transport mechanism Reverse bias Schottky emission β-Ga2O3 Schottky diode
ISSN号	1931-7573
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4607926
专题	湖南大学
作者单位	State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China. qfeng@mail.xidian.edu.cn. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China. jchzhang@xidian.edu.cn.
推荐引用方式 GB/T 7714	Hu Zhuangzhuang,Feng Qian,Feng Zhaoqing,et al. Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film.[J]. Nanoscale research letters,2019,Vol.14 No.1.
APA	Hu Zhuangzhuang.,Feng Qian.,Feng Zhaoqing.,Cai Yuncong.,Shen Yixian.,...&Hao Yue.(2019).Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film..Nanoscale research letters,Vol.14 No.1.
MLA	Hu Zhuangzhuang,et al."Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film.".Nanoscale research letters Vol.14 No.1(2019).

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