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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance 会议论文 NSTI Nanotechnology Conference and Expo, 2011-06-13 作者:  Zhang, Xiufang[1];  Ma, Chenyue[2];  Zhao, Wei[3];  Zhang, Chenfei[4];  Wang, Guozeng[5] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/30 Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity 会议论文 NSTI Nanotechnology Conference and Expo, 2011-06-13 作者:  Xu, Jiaojiao[1];  Ma, Chenyue[2];  Zhang, Chenfei[3];  Zhang, Xiufang[4];  Wu, Wen[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/30 FinFET device  process fluctuation  vertical nonuniformity  performance variation   An HQV-Approved Edge Directed Interpolation Algorithm for De-interlacing 会议论文 2011 IEEE 54TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2011-08-07 作者:  Yang, Shengqi[1];  Zhang, Wei[2];  Zou, Jully[3] 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/30 An HQV-Approved Edge Directed Interpolation Algorithm for De-interlacing 会议论文 2011 IEEE 54TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) 作者:  Yang, Shengqi[1];  Zhang, Wei[2];  Zou, Jully[3] 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/30 Case Study: Alleviating Hotspots and Improving Chip Reliability via Carbon Nanotube Thermal Interface 会议论文 Design, Automation and Test in Europe Conference (DATE), 2011-03-14 作者:  Zhang, Wei[1];  Huang, Jiale[2];  Yang, Shengqi[3];  Gupta, Pallav[4] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/30 A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance 会议论文 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010-12-15 作者:  Guo, Xinjie[1];  Wang, Shaodi[2];  Ma, Chenyue[3];  Zhang, Chenfei[4];  Lin, Xinnan[5] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/30 Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Xu, Jiaojiao[2,3];  Ma, Chenyue[3];  Zhang, Chenfei[3];  Zhang, Xiufang[3];  Wu, Wen[1] 收藏  |  浏览/下载：7/0  |  提交时间：2019/04/15 FinFET device  process fluctuation  vertical nonuniformity  performance variation   Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Xiufang[1,2];  Ma, Chenyue[2];  Zhao, Wei[2];  Zhang, Chenfei[3];  Wang, Guozeng[2] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/15