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	Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance
	Zhang, Xiufang[1]; Ma, Chenyue[2]; Zhao, Wei[3]; Zhang, Chenfei[4]; Wang, Guozeng[5]; Wu, Wen[6]; Wang, Wenping[7]; Cao, Yu[8]; Yang, Shengqi[9]; Yang, Zhang[10]
	2011
会议名称	NSTI Nanotechnology Conference and Expo
会议日期	2011-06-13
页码	172-175
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2304283
专题	上海大学
作者单位	1.[1]Peking Univ, Key Lab Integrated Microsyst, Sch Comp & Informat Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China. 2.Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, Shenzhen 518057, Peoples R China. 3.[2]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, Shenzhen 518057, Peoples R China. 4.[3]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, Shenzhen 518057, Peoples R China. 5.[4]Peking Univ, Inst Microelect, TSRC, Beijing 100871, Peoples R China. 6.[5]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, Shenzhen 518057, Peoples R China. 7.[6]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, Shenzhen 518057, Peoples R China. 8.[7]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, Shenzhen 518057, Peoples R China. 9.[8]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, Shenzhen 518057, Peoples R China. 10.[9]Shanghai Univ, Commun & Informat Engn Sch, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Xiufang[1],Ma, Chenyue[2],Zhao, Wei[3],et al. Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance[C]. 见:NSTI Nanotechnology Conference and Expo. 2011-06-13.

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